TO-247-4
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.
TO-247-4
TO-247-4

NTH4L040N120M3S

DigiKey Part Number
5556-NTH4L040N120M3S-ND
Manufacturer
onsemi
Manufacturer Product Number
NTH4L040N120M3S
Description
SILICON CARBIDE (SIC) MOSFET ELI
Manufacturer Standard Lead Time
16 Weeks
Customer Reference
Detailed Description
N-Channel 1200 V 54A (Tc) 231W (Tc) Through Hole TO-247-4L
Datasheet
 Datasheet
Product Attributes
Type
Description
Select All
Category
Mfr
onsemi
Series
-
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)
1200 V
Current - Continuous Drain (Id) @ 25°C
54A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
18V
Rds On (Max) @ Id, Vgs
54mOhm @ 20A, 18V
Vgs(th) (Max) @ Id
4.4V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
75 nC @ 18 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1700 pF @ 800 V
FET Feature
-
Power Dissipation (Max)
231W (Tc)
Operating Temperature
-55°C ~ 175°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-247-4L
Package / Case
TO-247-4
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In-Stock: 211
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Quantity
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$124.55000$124.55
30$76.34067$2,290.22
120$70.88092$8,505.71
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.
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