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GaN FETs
Nexperia's GaN FETs increase performance, efficiency, and reliability
Nexperia's GaN FETs enable smaller, faster, cooler, lighter systems, with lower overall system cost. Efficient power use is a key industrial challenge and a driver for innovation. Societal pressure and legislation are demanding increasing efficiencies in power conversion and control. For some applications, power conversion efficiency and power density are critical for market adoption. Prime examples include the trend towards automotive electrification and the high-voltage communications and industrial infrastructure sectors.
Features
- Easy to drive with 4 V threshold voltage
- Excellent body diode (low VF) for reduced losses in reverse conduction mode
- Ultra-low QRR for fast switching
- 800 V transient overvoltage capability
- Robust gate oxide (±20 V capability)
Applications
- Server and telecom power supplies
- Battery storage and UPS
- Industrial automation
- On-board-chargers (OBC)
- DC/DC power conversion
- Traction inverters
GaN FETs
| Image | Manufacturer Part Number | Description | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|---|---|---|
 |  | GAN063-650WSAQ | GANFET N-CH 650V 34.5A TO247-3 | 650 V | 34.5A (Tc) | 10V | 538 - Immediate | $107.76 | View Details |
| | GAN041-650WSBQ | GAN041-650WSB/SOT429/TO-247 | 650 V | 47.2A (Tc) | 10V | 311 - Immediate | $133.44 | View Details |
Published: 2020-09-30
Hong Kong, China