Low-Latency DRAMs
GSI Technology’s LLDRAMs allow access rates that were formerly found in SRAMs only
The GSI Technology low-latency DRAMs (LLDRAMs) are high-speed memory devices designed for high-address rate data processing typically found in networking and telecommunications applications. The 8-bank architecture and low tRC allow access rates formerly only found in SRAMs.
- Pin- and function-compatible with Micron RLDRAM® II
- 533 MHz DDR operation (1.067 Gbps/pin data rate)
- 38.4 Gbps peak bandwidth (x36 at 533 MHz clock frequency)
- x36, x18, and x9 organizations available
- Eight internal banks for concurrent operation and maximum bandwidth
- Reduced cycle time (15 ns at 533 MHz)
- Address multiplexing (nonmultiplexed address option available)
- SRAM-type interface
- Programmable read latency (RL), row cycle time, and burst sequence length
- Balanced read-and-write latencies to optimize data bus utilization
- Data mask for write commands
- Differential input clocks (CK, CK)
- Differential input data clocks (DKx, DKx)
- On-chip DLL generates CK edge-aligned data and output data clock signals
- Data valid signal (QVLD)
- 32 ms refresh (8 K refresh for each bank; 64 K refresh command must be issued in total each 32ms)
- 144-ball μBGA package
- HSTL I/O (1.5 V or 1.8 V nominal)
- 25 Ω to 60 Ω matched impedance outputs
- 2.5 V VEXT, 1.8 V VDD, 1.5 V or 1.8 V VDDQ I/O
- On-die termination (ODT) RTT
- Commercial and industrial temperature
Applications
- Lookup tables
- Queue buffering
- Image processing
LLDRAM IC's
Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
---|---|---|---|---|---|---|
![]() | GS4288C36GL-18I | IC DRAM 288MBIT PARALLEL 144UBGA | 0 - Immediate | See Page for Pricing | View Details | |
![]() | GS4576C18GM-18I | IC DRAM 576MBIT HSTL 144FBGA | 0 - Immediate | See Page for Pricing | View Details | |
![]() | GS4576C36GM-18I | IC DRAM 576MBIT HSTL 144FBGA | 0 - Immediate | See Page for Pricing | View Details |