AHV85111 Self-Powered Single-Channel Isolated GaN FET Driver

Allegro's AHV85111 isolated gate driver is optimized for driving GaN FETs in multiple applications and topologies. An isolated dual positive/negative output bias supply is integrated into the driver, eliminating the need for an external gate drive auxiliary bias supply or a high-side bootstrap. The bipolar output rail, with adjustable and regulated positive rail, improve the dv/dt immunity, greatly simplify the system design, and reduce the EMI through a reduced total common-mode (CM) capacitance. The device also allows the driving of a floating switch in any location in switching power topology.

The driver has a fast propagation delay and high peak source/sink capability to efficiently drive GaN FETs in high-frequency designs. The high CMTI with isolated outputs for bias power and drive make the driver ideal in applications requiring isolation, level-shifting, or ground separation for noise immunity.

The device is available in a compact low-profile surface-mount NH package. The integrated protection includes undervoltage lockout (UVLO) on the primary and secondary bias rails, an internal pull-down on the IN pin and OUTPD pin, a fast response enable input, overtemperature shutdown, and OUT pulse synchronization with first IN rising edge after enable (avoiding asynchronous runt pulses).