l TEXAS
INSTRUMENTS
V 0.1V
IREGrPRE RSETZ
‘000.
VIREG*PRE +0.1V
RSET2 1000,
bq24100
,
bq24103
,
bq24103A
,
bq24104
,
bq24105
bq24108
,
bq24109
,
bq24113
,
bq24113A
,
bq24115
SLUS606P –JUNE 2004–REVISED NOVEMBER 2015
www.ti.com
Electrical Characteristics (continued)
TJ= 0°C to 125°C and recommended supply voltage range (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
VLOWV ≤VI(BAT) < VO(REG) ,
K(ISET1) Output current set factor 1000 V/A
V(VCC) ≤VI(BAT) +V(DO-MAX)
PRECHARGE AND SHORT-CIRCUIT CURRENT REGULATION
Precharge to fast-charge transition voltage
VLOWV threshold, BAT, 68 71.4 75 %VO(REG)
bq24100/03/03A/04/05/08/09 ICs only
Deglitch time for precharge to fast charge Rising voltage;
t 20 30 40 ms
transition, tRISE, tFALL = 100 ns, 2-mV overdrive
IOPRECHG Precharge range VI(BAT) < VLOWV, t < tPRECHG 15 200 mA
V(ISET2) Precharge set voltage, ISET2 VI(BAT) < VLOWV, t < tPRECHG 100 mV
K(ISET2) Precharge current set factor 1000 V/A
100 mV ≤VIREG-PRE ≤100 mV,
VIREG-PRE Voltage regulated across RSNS-Accuracy –20% 20%
(PGM) Where
1.2 kΩ ≤ RSET2 ≤10 kΩ, Select RSET1
to program VIREG-PRE,
VIREG-PRE (Measured) = IOPRE-CHG × RSNS
(–20% to 20% excludes errors due to RSET1
and RSNS tolerances)
CHARGE TERMINATION (CURRENT TAPER) DETECTION
ITERM Charge current termination detection range VI(BAT) > VRCH 15 200 mA
Charge termination detection set voltage,
VTERM VI(BAT) > VRCH 100 mV
ISET2
K(ISET2) Termination current set factor 1000 V/A
Charger termination accuracy VI(BAT) > VRCH –20% 20%
Both rising and falling,
tdg-TERM Deglitch time for charge termination 20 30 40 ms
2-mV overdrive tRISE, tFALL = 100 ns
TEMPERATURE COMPARATOR AND VTSB BIAS REGULATOR
%LTF Cold temperature threshold, TS, % of bias VLTF = VO(VTSB) × % LTF/100 72.8% 73.5% 74.2%
%HTF Hot temperature threshold, TS, % of bias VHTF = VO(VTSB) × % HTF/100 33.7% 34.4% 35.1%
Cutoff temperature threshold, TS, % of
%TCO VTCO = VO(VTSB) × % TCO/100 28.7% 29.3% 29.9%
bias
LTF hysteresis 0.5% 1% 1.5%
Deglitch time for temperature fault, TS 20 30 40
Both rising and falling,
tdg-TS ms
Deglitch time for temperature fault, TS, 2-mV overdrive tRISE, tFALL = 100 ns 500
bq24109, bq24104
VCC > VIN(min),
VO(VTSB) TS bias output voltage 3.15 V
I(VTSB) = 10 mA 0.1 μF≤CO(VTSB) ≤1μF
VCC >IN(min),
VO(VTSB) TS bias voltage regulation accuracy –10% 10%
I(VTSB) = 10 mA 0.1 μF≤CO(VTSB) ≤1μF
BATTERY RECHARGE THRESHOLD
VRCH Recharge threshold voltage Below VOREG 75 100 125 mV/cell
VI(BAT) < decreasing below threshold,
tdg-RCH Deglitch time 20 30 40 ms
tFALL = 100 ns 10-mV overdrive
STAT1, STAT2, AND PG OUTPUTS
VOL(STATx) Low-level output saturation voltage, STATx IO= 5 mA 0.5 V
VOL(PG) Low-level output saturation voltage, PG IO= 10 mA 0.1
CE CMODE, CELLS INPUTS
VIL Low-level input voltage IIL = 5 μA 0 0.4 V
VIH High-level input voltage IIH = 20 μA 1.3 VCC
TTC INPUT
tPRECHG Precharge timer 1440 1800 2160 s
tCHARGE Programmable charge timer range t(CHG) = C(TTC) × K(TTC) 25 572 minutes
Charge timer accuracy 0.01 μF≤C(TTC) ≤0.18 μF -10% 10%
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