Toshiba's TMPM3HxF10xx series of ARM Cortex-M3 microcontrollers, part of the TXZ+™ family, operate at 120 MHz and are built on a 40 nm process node.

The Toshiba DF2B6M4BSL ultra-low capacitance TVS Diode is designed to protect high-frequency antennas of IoT devices from ESD.

Toshiba's 650 and 1,200 volt 3rd Generation Silicon Carbide technology is designed for high-efficiency power supply applications.

The Toshiba TCKE8xx and TCKE712BNL series of eFuse ICs integrate a comprehensive range of high-speed, resettable, and low on-resistance circuit protection functions not possible with conventional fuses.

Toshiba's TCKE712BNL is a 13.2 V high input voltage single-input/single-output eFuse IC that features adjustable overcurrent protection, overvoltage protection, and slew rate control.

Toshiba's TC78H660FTG 2-channel brushed motor driver is a compact and high-performance motor driver for low-voltage applications.

The TW070J120B silicon carbide MOSFET, from Toshiba, is a power device featuring a low R-DS-On of 70 milliohms.

Toshiba’s AEC-Q101-qualified photocouplers and photorelays are built to maximize performance in the most demanding of automotive applications.

The TCKE8xx Series of eFuse ICs, from Toshiba, provides high-speed and high-performance circuit protection in a single compact package.

AGC is Toshiba’s unique stepping motor technology to automatically optimize the drive current in real time according to load torques. It helps reduce unnecessary current and drastically cut power consumption and heat generation.

This series of photorelays from Toshiba utilizes state-of-the-art U-MOSVIII process technology MOSFET to improve system reliability and reduce board space since separate relay drivers are not needed.

Toshiba's LDO achieves industry's best-in-1 class ripple rejection ratio and load transient response. This helps to minimize output voltage fluctuations.

Toshiba will propose suitable semiconductor products in power line and data line around the Type-C connector according to customer’s usage conditions.

Toshiba’s 4th generation ESD protection diode (EAP-IV), achieves top level low dynamic resistance and low clamping voltages. It protects devices from ESD circuit destruction and degradation over time.