Name: SISH892BDN-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SISH892BDN-T1-GE3TR-ND
Price: 8.65 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SISH892BDN-T1-GE3
DigiKey Part Number	742-SISH892BDN-T1-GE3TR-ND - Tape & Reel (TR) 742-SISH892BDN-T1-GE3CT-ND - Cut Tape (CT) 742-SISH892BDN-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SISH892BDN-T1-GE3
Description	N-CHANNEL 100 V (D-S) MOSFET POW
Manufacturer Standard Lead Time	29 Weeks
Customer Reference
Detailed Description	N-Channel 100 V 6.8A (Ta), 20A (Tc) 3.4W (Ta), 29W (Tc) Surface Mount PowerPAK® SO-8DC
Datasheet	Datasheet
EDA/CAD Models	SISH892BDN-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET® Gen IV
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Ta), 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	30.4mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	26.5 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1110 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	3.4W (Ta), 29W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8DC
Package / Case	PowerPAK® SO-8