Name: SIJH5800E-T1-GE3
Brand: Vishay Siliconix
SKU: 742-SIJH5800E-T1-GE3TR-ND
Price: 48.86 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIJH5800E-T1-GE3
DigiKey Part Number	742-SIJH5800E-T1-GE3TR-ND - Tape & Reel (TR) 742-SIJH5800E-T1-GE3CT-ND - Cut Tape (CT) 742-SIJH5800E-T1-GE3DKR-ND - Digi-Reel®
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIJH5800E-T1-GE3
Description	N-CHANNEL 80 V (D-S) 175C MOSFET
Manufacturer Standard Lead Time	28 Weeks
Customer Reference
Detailed Description	N-Channel 80 V 30A (Ta), 302A (Tc) 3.3W (Ta), 333W (Tc) Surface Mount PowerPAK® 8 x 8
Datasheet	Datasheet
EDA/CAD Models	SIJH5800E-T1-GE3 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80 V
Current - Continuous Drain (Id) @ 25°C	30A (Ta), 302A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	1.35mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	155 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7730 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	PowerPAK® 8 x 8