Name: SIHW21N80AE-GE3
Brand: Vishay Siliconix
SKU: SIHW21N80AE-GE3-ND
Price: 44.83 HKD
Availability: OutOfStock

SIHW21N80AE-GE3 is out of stock and can be placed on backorder.

Available Substitutes:

Parametric Equivalent

Vishay Siliconix

In Stock: 460

Unit Price: $46.23000

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHW21N80AE-GE3
DigiKey Part Number	SIHW21N80AE-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHW21N80AE-GE3
Description	MOSFET N-CH 800V 17.4A TO247AD
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 800 V 17.4A (Tc) 32W (Tc) Through Hole TO-247AD
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	17.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	235mOhm @ 11A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1388 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	32W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3
Base Product Number	SIHW21