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N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHP12N65E-GE3

DigiKey Part Number
SIHP12N65E-GE3-ND
Manufacturer
Manufacturer Product Number
SIHP12N65E-GE3
Description
MOSFET N-CH 650V 12A TO220AB
Manufacturer Standard Lead Time
24 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 12A (Tc) 156W (Tc) Through Hole TO-220AB
Datasheet
 Datasheet
EDA/CAD Models
SIHP12N65E-GE3 Models
Product Attributes
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Category
Vgs(th) (Max) @ Id
4V @ 250µA
Mfr
Gate Charge (Qg) (Max) @ Vgs
70 nC @ 10 V
Packaging
Tube
Vgs (Max)
±30V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
1224 pF @ 100 V
FET Type
Power Dissipation (Max)
156W (Tc)
Technology
Operating Temperature
-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss)
650 V
Mounting Type
Through Hole
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
TO-220AB
Drive Voltage (Max Rds On, Min Rds On)
10V
Package / Case
Rds On (Max) @ Id, Vgs
380mOhm @ 6A, 10V
Base Product Number
Environmental & Export Classifications
Product Questions and Answers
Additional Resources
Substitutes (11)
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IPP65R420CFDXKSA1Infineon Technologies0IPP65R420CFDXKSA1-ND$0.00000Similar
IXFP22N60P3IXYS219IXFP22N60P3-ND$62.24000Similar
In-Stock: 0
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All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$27.21000$27.21
10$17.68400$176.84
100$12.24430$1,224.43
500$9.91826$4,959.13
1,000$9.17100$9,171.00
2,000$8.54284$17,085.68
5,000$7.86357$39,317.85
10,000$7.86181$78,618.10
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.