Name: SIHB053N60E-GE3
Brand: Vishay Siliconix
SKU: 742-SIHB053N60E-GE3-ND
Price: 56.62 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SIHB053N60E-GE3
DigiKey Part Number	742-SIHB053N60E-GE3-ND
Manufacturer	Vishay Siliconix
Manufacturer Product Number	SIHB053N60E-GE3
Description	E SERIES POWER MOSFET D2PAK (TO-
Manufacturer Standard Lead Time	25 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 47A (Tc) 278W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Vishay Siliconix
Series	E
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	54mOhm @ 26.5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	92 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3722 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263 (D2PAK)
Package / Case	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB