Name: TK6A60W,S4VX
Brand: Toshiba Semiconductor and Storage
SKU: TK6A60WS4VX-ND
Price: 16.05 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK6A60W,S4VX
DigiKey Part Number	TK6A60WS4VX-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK6A60W,S4VX
Description	MOSFET N-CH 600V 6.2A TO220SIS
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 600 V 6.2A (Ta) 30W (Tc) Through Hole TO-220SIS
Datasheet	Datasheet
EDA/CAD Models	TK6A60W,S4VX Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	6.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	750mOhm @ 3.1A, 10V
Vgs(th) (Max) @ Id	3.7V @ 310µA
Gate Charge (Qg) (Max) @ Vgs	12 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	390 pF @ 300 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220SIS
Package / Case	TO-220-3 Full Pack
Base Product Number	TK6A60