Name: TK13E25D,S1X(S
Brand: Toshiba Semiconductor and Storage
SKU: TK13E25DS1X(S-ND
Price: 28.32 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

TK13E25D,S1X(S
DigiKey Part Number	TK13E25DS1X(S-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	TK13E25D,S1X(S
Description	MOSFET N-CH 250V 13A TO220-3
Manufacturer Standard Lead Time	16 Weeks
Customer Reference
Detailed Description	N-Channel 250 V 13A (Ta) 102W (Tc) Through Hole TO-220-3
Datasheet	Datasheet
EDA/CAD Models	TK13E25D,S1X(S Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	250mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	102W (Tc)
Operating Temperature	150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Base Product Number	TK13E25