Name: GT40QR21(STA1,E,D
Brand: Toshiba Semiconductor and Storage
SKU: 264-GT40QR21(STA1ED-ND
Price: 43.63 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT40QR21(STA1,E,D
DigiKey Part Number	264-GT40QR21(STA1ED-ND
Manufacturer	Toshiba Semiconductor and Storage
Manufacturer Product Number	GT40QR21(STA1,E,D
Description	IGBT 1200V 40A TO-3P
Manufacturer Standard Lead Time	12 Weeks
Customer Reference
Detailed Description	IGBT 1200 V 40 A 230 W Through Hole TO-3P(N)
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer	Toshiba Semiconductor and Storage
Series	-
Packaging	Tube
Part Status	Active
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	40 A
Current - Collector Pulsed (Icm)	80 A
Vce(on) (Max) @ Vge, Ic	2.7V @ 15V, 40A
Power - Max	230 W
Switching Energy	-, 290µJ (off)
Input Type	Standard
Td (on/off) @ 25°C	-
Test Condition	280V, 40A, 10Ohm, 20V
Reverse Recovery Time (trr)	600 ns
Operating Temperature	175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Supplier Device Package	TO-3P(N)
Base Product Number	GT40QR21