Name: SCTWA90N65G2V
Brand: STMicroelectronics
SKU: 497-SCTWA90N65G2V-ND
Price: 237.99 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTWA90N65G2V
DigiKey Part Number	497-SCTWA90N65G2V-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTWA90N65G2V
Description	SILICON CARBIDE POWER MOSFET 650
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 119A (Tc) 565W (Tc) Through Hole TO-247 Long Leads
Datasheet	Datasheet
EDA/CAD Models	SCTWA90N65G2V Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	119A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	24mOhm @ 50A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	565W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247 Long Leads
Package / Case	TO-247-3
Base Product Number	SCTWA90