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TO-247-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTW35N65G2VAG

DigiKey Part Number
497-SCTW35N65G2VAG-ND
Manufacturer
Manufacturer Product Number
SCTW35N65G2VAG
Description
SICFET N-CH 650V 45A HIP247
Manufacturer Standard Lead Time
32 Weeks
Customer Reference
Detailed Description
N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Datasheet
 Datasheet
EDA/CAD Models
SCTW35N65G2VAG Models
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tube
Part Status
Active
FET Type
Technology
Drain to Source Voltage (Vdss)
650 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
18V, 20V
Rds On (Max) @ Id, Vgs
67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 20 V
Vgs (Max)
+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds
1370 pF @ 400 V
FET Feature
-
Power Dissipation (Max)
240W (Tc)
Operating Temperature
-55°C ~ 200°C (TJ)
Grade
Automotive
Qualification
AEC-Q101
Mounting Type
Through Hole
Supplier Device Package
HiP247™
Package / Case
Base Product Number
0 In Stock
Check Lead Time
Request Stock Notification
All prices are in HKD
Tube
QuantityUnit PriceExt Price
1$119.22000$119.22
30$75.41267$2,262.38
120$72.28283$8,673.94
510$69.38875$35,388.26
Manufacturers Standard Package
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.