Name: SCTW35N65G2VAG
Brand: STMicroelectronics
SKU: 497-SCTW35N65G2VAG-ND
Price: 119.53 HKD
Availability: OutOfStock

SCTW35N65G2VAG is out of stock and can be placed on backorder.

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Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTW35N65G2VAG
DigiKey Part Number	497-SCTW35N65G2VAG-ND
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTW35N65G2VAG
Description	SICFET N-CH 650V 45A HIP247
Manufacturer Standard Lead Time	32 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 45A (Tc) 240W (Tc) Through Hole HiP247™
Datasheet	Datasheet
EDA/CAD Models	SCTW35N65G2VAG Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V, 20V
Rds On (Max) @ Id, Vgs	67mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	73 nC @ 20 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1370 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	240W (Tc)
Operating Temperature	-55°C ~ 200°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	HiP247™
Package / Case	TO-247-3
Base Product Number	SCTW35