Name: SCTL90N65G2V
Brand: STMicroelectronics
SKU: 497-SCTL90N65G2VTR-ND
Price: 240.05 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

SCTL90N65G2V
DigiKey Part Number	497-SCTL90N65G2VTR-ND - Tape & Reel (TR) 497-SCTL90N65G2VCT-ND - Cut Tape (CT) 497-SCTL90N65G2VDKR-ND - Digi-Reel®
Manufacturer	STMicroelectronics
Manufacturer Product Number	SCTL90N65G2V
Description	SILICON CARBIDE POWER MOSFET 650
Manufacturer Standard Lead Time	45 Weeks
Customer Reference
Detailed Description	N-Channel 650 V 40A (Tc) 935W (Tc) Surface Mount PowerFlat™ (8x8) HV
Datasheet	Datasheet
EDA/CAD Models	SCTL90N65G2V Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	STMicroelectronics
Series	-
Packaging	Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	24mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	157 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3380 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	935W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	PowerFlat™ (8x8) HV
Package / Case	4-PowerVDFN