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TO-220-3
Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

R6012ANX

DigiKey Part Number
R6012ANX-ND
Manufacturer
Rohm Semiconductor
Manufacturer Product Number
R6012ANX
Description
MOSFET N-CH 600V 12A TO220FM
Customer Reference
Detailed Description
N-Channel 600 V 12A (Ta) 50W (Tc) Through Hole TO-220FM
Datasheet
 Datasheet
EDA/CAD Models
R6012ANX Models
Product Attributes
Type
Description
Select All
Category
Mfr
Rohm Semiconductor
Series
-
Packaging
Bulk
Part Status
Not For New Designs
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
600 V
Current - Continuous Drain (Id) @ 25°C
12A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
420mOhm @ 6A, 10V
Vgs(th) (Max) @ Id
4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
35 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
1300 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
50W (Tc)
Operating Temperature
150°C (TJ)
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
TO-220-3 Full Pack
Base Product Number
R6012
Product Questions and Answers

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Available To Order
This product is not kept in stock at DigiKey. The lead time shown will apply to the manufacturer’s shipment to DigiKey. Upon receiving the product, DigiKey will ship to fill open orders.
Not recommended for new design, minimums may apply View Substitutes
Quantity
All prices are in HKD
Bulk
QuantityUnit PriceExt Price
500$17.16636$8,583.18
Manufacturers Standard Package