2SK1808-E is available for purchase but is not normally stocked.
Available Substitutes:

MFR Recommended


Toshiba Semiconductor and Storage
In Stock: 27
Unit Price: $17.24000
Datasheet
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2SK1808-E

DigiKey Part Number
559-2SK1808-E-ND
Manufacturer
Manufacturer Product Number
2SK1808-E
Description
NCH POWER MOSFET 900V 4A 4000MOH
Customer Reference
Detailed Description
N-Channel 900 V 4A (Ta) 35W (Tc) Through Hole TO-220FM
Product Attributes
Type
Description
Select All
Category
Mfr
Series
-
Packaging
Tray
Part Status
Last Time Buy
FET Type
Technology
Drain to Source Voltage (Vdss)
900 V
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
740 pF @ 10 V
FET Feature
-
Power Dissipation (Max)
35W (Tc)
Operating Temperature
150°C
Grade
-
Qualification
-
Mounting Type
Through Hole
Supplier Device Package
TO-220FM
Package / Case
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Last Time Buy
Last Time Buy Date: 31/3/2026
All prices are in HKD
Tray
QuantityUnit PriceExt Price
375$82.12029$30,795.11
Note: Due to DigiKey value-add services the packaging type may change when product is purchased at quantities beneath the standard package.