Name: MSCSM120DAM31CTBL1NG
Brand: Microchip Technology
SKU: 150-MSCSM120DAM31CTBL1NG-ND
Price: 693.06 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

MSCSM120DAM31CTBL1NG
DigiKey Part Number	150-MSCSM120DAM31CTBL1NG-ND
Manufacturer	Microchip Technology
Manufacturer Product Number	MSCSM120DAM31CTBL1NG
Description	PM-MOSFET-SIC-SBD-BL1
Manufacturer Standard Lead Time	20 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 79A 310W Chassis Mount
Datasheet	Datasheet
EDA/CAD Models	MSCSM120DAM31CTBL1NG Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Microchip Technology
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	79A
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id	2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	232 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3020 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	310W
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Chassis Mount
Supplier Device Package	-
Package / Case	Module
Base Product Number	MSCSM120