MCB60I1200TZ-TUB IXYS | Discrete Semiconductor Products

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MCB60I1200TZ-TUB
DigiKey Part Number	238-MCB60I1200TZ-TUB-ND
Manufacturer	IXYS
Manufacturer Product Number	MCB60I1200TZ-TUB
Description	SICFET N-CH 1.2KV 90A TO268AA
Customer Reference
Detailed Description	N-Channel 1200 V 90A (Tc) Surface Mount TO-268AA (D3Pak-HV)
EDA/CAD Models	MCB60I1200TZ-TUB Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	IXYS
Series	-
Packaging	Tube
Part Status	Obsolete
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	34mOhm @ 50A, 20V
Vgs(th) (Max) @ Id	4V @ 15mA
Gate Charge (Qg) (Max) @ Vgs	160 nC @ 20 V
Vgs (Max)	+20V, -5V
Input Capacitance (Ciss) (Max) @ Vds	2790 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-40°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-268AA (D3Pak-HV)
Package / Case	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Base Product Number	MCB60I1200