Name: GT180P08T
Brand: Goford Semiconductor
SKU: 3141-GT180P08T-ND
Price: 19.58 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

GT180P08T
DigiKey Part Number	3141-GT180P08T-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	GT180P08T
Description	MOSFET P-CH 80V 89A TO-220
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	P-Channel 40 V 89A (Tc) 245W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	-
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40 V
Current - Continuous Drain (Id) @ 25°C	89A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	17mOhm @ 20A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	62 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6040 pF @ 40 V
FET Feature	-
Power Dissipation (Max)	245W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3