Name: G12P10TE
Brand: Goford Semiconductor
SKU: 3141-G12P10TE-ND
Price: 9.71 HKD
Availability: InStock

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G12P10TE
DigiKey Part Number	3141-G12P10TE-ND
Manufacturer	Goford Semiconductor
Manufacturer Product Number	G12P10TE
Description	P-100V,-12A,RD(MAX)<200M@-10V,VT
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	P-Channel 100 V 12A (Tc) 40W (Tc) Through Hole TO-220
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Goford Semiconductor
Series	TrenchFET®
Packaging	Tube
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	200mOhm @ 6A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	40W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3

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