Name: DI2A2N100D1K-AQ
Brand: Diotec Semiconductor
SKU: 4878-DI2A2N100D1K-AQ-ND
Price: 5.17527 HKD
Availability: OutOfStock

DI2A2N100D1K-AQ is available for purchase but is not normally stocked.

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DI2A2N100D1K

Diotec Semiconductor

In Stock: 4,191

Unit Price: $17.43000

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This part is an engineering sample and is not fully tested. This part should only be used for functional evaluation and proof of concept, not for production or end use.

N-Channel 1000 V 2.2A (Tc) 30W (Tc) Surface Mount TO-252 (DPAK)

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DI2A2N100D1K-AQ
DigiKey Part Number	4878-DI2A2N100D1K-AQ-ND
Manufacturer	Diotec Semiconductor
Manufacturer Product Number	DI2A2N100D1K-AQ
Description	MOSFET N-CH 1000V 2.2A TO-252-3
Manufacturer Standard Lead Time	8 Weeks
Customer Reference
Detailed Description	N-Channel 1000 V 2.2A (Tc) 30W (Tc) Surface Mount TO-252 (DPAK)
Datasheet	Datasheet
EDA/CAD Models	DI2A2N100D1K-AQ Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diotec Semiconductor
Series	-
Packaging	Bulk
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000 V
Current - Continuous Drain (Id) @ 25°C	2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	6.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-252-3, DPAK (2 Leads + Tab), SC-63