Name: DMWSH120H28SM4
Brand: Diodes Incorporated
SKU: 31-DMWSH120H28SM4-ND
Price: 224.08 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

DMWSH120H28SM4
DigiKey Part Number	31-DMWSH120H28SM4-ND
Manufacturer	Diodes Incorporated
Manufacturer Product Number	DMWSH120H28SM4
Description	SICFET N-CH 1200V TO-247
Manufacturer Standard Lead Time	40 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 100A (Tc) 429W (Tc) Through Hole TO-247-4
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Diodes Incorporated
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	28.5mOhm @ 50A, 15V
Vgs(th) (Max) @ Id	3.6V @ 17.7mA
Gate Charge (Qg) (Max) @ Vgs	173.7 nC @ 15 V
Vgs (Max)	+19V, -8V
Input Capacitance (Ciss) (Max) @ Vds	3944 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	429W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-4
Package / Case	TO-247-4