Name: AS1M080120P
Brand: ANBON SEMICONDUCTOR (INT'L) LIMITED
SKU: 4530-AS1M080120P-ND
Price: 110.8 HKD
Availability: OutOfStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AS1M080120P
DigiKey Part Number	4530-AS1M080120P-ND
Manufacturer	ANBON SEMICONDUCTOR (INT'L) LIMITED
Manufacturer Product Number	AS1M080120P
Description	N-CHANNEL SILICON CARBIDE POWER
Manufacturer Standard Lead Time	4 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 36A (Tc) 192W (Tc) Through Hole TO-247-3
Datasheet	Datasheet

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	ANBON SEMICONDUCTOR (INT'L) LIMITED
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	98mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	79 nC @ 20 V
Vgs (Max)	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds	1475 pF @ 1000 V
FET Feature	-
Power Dissipation (Max)	192W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Grade	-
Qualification	-
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3