Name: AIMW120R080M1XKSA1
Brand: Infineon Technologies
SKU: 448-AIMW120R080M1XKSA1-ND
Price: 126.11 HKD
Availability: InStock

Image shown is a representation only. Exact specifications should be obtained from the product data sheet.

AIMW120R080M1XKSA1
DigiKey Part Number	448-AIMW120R080M1XKSA1-ND
Manufacturer	Infineon Technologies
Manufacturer Product Number	AIMW120R080M1XKSA1
Description	1200V COOLSIC MOSFET PG-TO247-3
Manufacturer Standard Lead Time	26 Weeks
Customer Reference
Detailed Description	N-Channel 1200 V 33A (Tc) 150W (Tc) Through Hole PG-TO247-3-41
Datasheet	Datasheet
EDA/CAD Models	AIMW120R080M1XKSA1 Models

Product Attributes

Type	Description	Select All
Category	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Mfr	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	104mOhm @ 13A, 15V
Vgs(th) (Max) @ Id	5.7V @ 5.6mA
Gate Charge (Qg) (Max) @ Vgs	28 nC @ 15 V
Vgs (Max)	+20V, -7V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	150W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Grade	Automotive
Qualification	AEC-Q101
Mounting Type	Through Hole
Supplier Device Package	PG-TO247-3-41
Package / Case	TO-247-3