DM Silicon Carbide Half-Bridge Power Module

Wolfspeed DM power modules offer greater power density in a lightweight platform

Image of Wolfspeed DM Silicon Carbide Half-Bridge Power ModuleThe Wolfspeed DM module family is engineered to provide exceptional current capability in a form factor with a low mass (41 g) and volume. Designers can create high-power density silicon carbide converters for applications with weight and space constraints thanks to DM. With a lightweight AlSiC baseplate and a high-reliability silicon nitride (Si3N4) power substrate to ensure mechanical robustness, the optimized packaging allows for +175°C continuous junction operation.

The DM4 option includes Gen 4 technology, which reduces cosmic FIT rate for operation at higher altitudes. Taking advantage of lower-cost PCBs versus choosing a legacy bus bar solution helps reduce development time and costs.

Common applications for the DM power modules include e-mobility inverters, EV chargers, high-efficiency converters, and renewable energy.

Features
  • Ultra-low mass for weight-critical systems
  • High-frequency operation
  • High power density footprint
  • High junction temperature (+175°C) operation
  • Silicon nitride insulator
  • Lightweight AlSiC baseplate
  • Zero turn-off tail current from the MOSFET
  • Normally-off fail-safe device operation
  • Gen 4 options
Applications
  • E-mobility inverters
  • EV chargers
  • High-efficiency converters/inverters
  • Renewable energy

DM Silicon Carbide Half-Bridge Power Module

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
SIC MODULECAB3R5M12DM4SIC MODULE13 - Immediate$4,937.85View Details
MOSFET 2N-CH 900V 518A MODULECAB003M09DM3MOSFET 2N-CH 900V 518A MODULE1 - Immediate$12,573.09View Details
Updated: 2025-04-23
Published: 2024-10-03