DM Silicon Carbide Half-Bridge Power Module
Wolfspeed DM power modules offer greater power density in a lightweight platform
The Wolfspeed DM module family is engineered to provide exceptional current capability in a form factor with a low mass (41 g) and volume. Designers can create high-power density silicon carbide converters for applications with weight and space constraints thanks to DM. With a lightweight AlSiC baseplate and a high-reliability silicon nitride (Si3N4) power substrate to ensure mechanical robustness, the optimized packaging allows for +175°C continuous junction operation.
The DM4 option includes Gen 4 technology, which reduces cosmic FIT rate for operation at higher altitudes. Taking advantage of lower-cost PCBs versus choosing a legacy bus bar solution helps reduce development time and costs.
Common applications for the DM power modules include e-mobility inverters, EV chargers, high-efficiency converters, and renewable energy.
- Ultra-low mass for weight-critical systems
- High-frequency operation
- High power density footprint
- High junction temperature (+175°C) operation
- Silicon nitride insulator
- Lightweight AlSiC baseplate
- Zero turn-off tail current from the MOSFET
- Normally-off fail-safe device operation
- Gen 4 options
- E-mobility inverters
- EV chargers
- High-efficiency converters/inverters
- Renewable energy
DM Silicon Carbide Half-Bridge Power Module
Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
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![]() | ![]() | CAB3R5M12DM4![]() | SIC MODULE | 13 - Immediate | $4,937.85 | View Details |
![]() | ![]() | CAB003M09DM3 | MOSFET 2N-CH 900V 518A MODULE | 1 - Immediate | $12,573.09 | View Details |