SISD5300DN N-Channel 30 V MOSFET

Vishay's versatile 30 V N-channel TrenchFET® Gen V power MOSFET features source flip technology in a 3.3 mm by 3.3 mm PowerPAK® 1212-F package. Occupying the same footprint as the PowerPAK 1212-8S, the SiSD5300DN offers 18% lower on-resistance to increase power density while its source flip technology reduces thermal resistance by +63°C/W to +56°C/W. In addition, the MOSFET’s FOM represents a 35% improvement over previous-generation devices, which translates into reduced conduction and switching losses to save energy in power conversion applications.

PowerPAK1212-F source flip technology reverses the usual proportions of the ground and source pads, extending the area of the ground pad to provide a more efficient thermal dissipation path and thus promoting cooler operation. At the same time, the PowerPAK 1212-F minimizes the extent of the switching area, helping to reduce the impact of trace noise. In the PowerPAK 1212-F package specifically, the source pad dimension increases by a factor of 10, from 0.36 mm to 4.13 mm, enabling a commensurate improvement in thermal performance. The PowerPAK1212-F’s center gate design also simplifies the parallelization of multiple devices on a single-layer PCB.