SiHR080N60E E Series Power MOSFET

To provide higher efficiency and power density for telecom, industrial, and computing applications, Vishay offers their fourth-generation 600 V E series power MOSFET in their top-side cooling PowerPAK^® 8 x 8LR package. Compared to previous-generation devices, the N-channel SiHR080N60E slashes on-resistance by 27% and resistance times gate charge, a key figure of merit (FOM) for 600 V MOSFETs used in power conversion applications, by 60% while providing higher current in a smaller footprint than devices in the D²PAK package. The SiHR080N60E’s 10.42 mm by 8 mm by 1.65 mm top-side cooling PowerPAK 8 x 8LR package features a 50.8% smaller footprint than the D²PAK while offering a 66% lower height.

Due to its top-side cooling, the package delivers excellent thermal capability with an extremely low junction-to-case thermal resistance of +0.25°C/W. This allows for 46% higher current than the D²PAK at the same on-resistance level, enabling dramatically higher power density. In addition, the SiHR080N60E’s industry-low 3.1 Ω*nC on-resistance times gate charge FOM translates into reduced conduction and switching losses to save energy and increase efficiency in power systems greater than 2 kW.

The MOSFET’s low typical effective output capacitances C_o(er) and C_o(tr) of 79 pF and 499 pF, respectively improve switching performance in hard-switched topologies such as power factor correction (PFC), half-bridge, and two-switch forward designs. Vishay offers a broad line of MOSFET technologies that support all stages of the power conversion process, from high-voltage inputs to the low-voltage outputs required to power high-tech equipment. With the SiHR080N60E and other devices in the fourth-generation 600 V E series family, the company is addressing the need for efficiency and power density improvements in two of the first stages of the power system architecture: PFC and subsequent DC/DC converter blocks.