Transphorm

TP65H035G4WS SuperGaN® 35mΩ GaN FET

Transphorm's 650 V Gen IV SuperGaN device comes in a TO-247 package

Image of Transphorm's TP65H035G4WS SuperGaN® 35mΩ GaN FETBuilt using Transphorm’s JEDEC-qualified Gen IV GaN platform, the high-voltage TP65H035G4WS offers a 35 mΩ on-resistance in a standard TO-247 package allowing for easy drivability. The FET’s performance and overall design advantages are maximized when used in a bridgeless totem pole PFC topology. Part of the SuperGaN product portfolio, this device offers a 4 V threshold and ±20 V gate robustness with the highest quality, highest reliability (Q+R) GaN power semiconductors.

Applications
  • AC/DC converters
  • DC/DC converters
  • DC/AC inverter systems

TP65H035G4WS SuperGaN® 35mΩ GaN FET

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
GANFET N-CH 650V 46.5A TO247-3TP65H035G4WSGANFET N-CH 650V 46.5A TO247-3691 - Immediate$156.33View Details
Published: 2022-05-26

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Related Product Highlight

TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs Transphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices, the TP65H035G4WS and TP65H300G4LSG.

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