Transphorm

TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs

Transphorm’s JEDEC-qualified Gen IV FETs are offered in TO-247 and PQFN packages

Image of Transphorm TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETsTransphorm’s 650 V SuperGaN™ Gen IV FETs include two robust JEDEC-qualified devices. The TP65H035G4WS offers a typical on-resistance of 35 mΩ in a TO-247 package. The TP65H300G4LSG offers a typical on-resistance of 240 mΩ in a PQFN88 package. Power systems using SuperGaN FETs can reach greater than 99% efficiency when used with bridgeless totem-pole power factor correction (PFC). Benefits include an improved figure of merit of ~10%; enhanced inrush current capabilities; and easier designability given switching node snubbers at high operation currents are no longer required.

TP65H SuperGaN™ 650 V 35 mΩ and 240 mΩ FETs

ImageManufacturer Part NumberDescriptionCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdAvailable QuantityPriceView Details
GANFET N-CH 650V 46.5A TO247-3TP65H035G4WSGANFET N-CH 650V 46.5A TO247-346.5A (Tc)41mOhm @ 30A, 10V4.8V @ 1mA691 - Immediate$156.33View Details
GANFET N-CH 650V 6.5A 3PQFNTP65H300G4LSG-TRGANFET N-CH 650V 6.5A 3PQFN6.5A (Tc)312mOhm @ 5A, 8V2.6V @ 500µA0 - Immediate$38.53View Details
Published: 2020-07-28

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TP65H035G4WS SuperGaN® 35mΩ GaN FET Transphorm’s SuperGaN® FET offers high reliability, high efficiency, and high voltage power conversion in an easy-to-drive JEDEC-qualified device.

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