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Select Diode Based Products
Skyworks Solutions offers a select group of diodes from our diverse RF diode portfolio in stock and ready for immediate design into your demanding applications.
Building on a proven legacy, our diode product offering includes PIN, Schottky, varactor and limiter diodes for a wide variety of microwave applications including WLAN, infrastructure-5G, handset, SatCom (LNB/DBS-CATV), automotive, military, test & measurement, metering, medical, RFID and IoT. Our discrete silicon and GaAs semiconductors are available as die, plastic packaged, surface mount (SMT), and ceramic hermetic packaged devices. Frequency ranges include low frequency, HF, VHF, UHF, L band, S band, C band, X band, KU band, K band, and Ka band. Skyworks diode products are manufactured using the most advanced processes and leadership technology.
- High Power PIN Switch
- PIN
- Limiter
- Schottky
- Varactor
- Evaluation Boards
High Power PIN Diode Switches
Skyworks offers a series of high power SPDT PIN diode switches in a compact QFN (Quad Flat No-Lead) package which deliver leading performance and efficiency. The switches are designed for applications which include transmit/receive and failsafe switching for 5G TD-SCDMA LTE base stations, active antenna arrays, micro-cell and macro-cell base stations, land mobile radios and military communications systems.
Features:
- Excellent power handling from 40 to 120 W
- Low insertion loss
- High isolation
- Superb linearity over a broad frequency range: 20 MHz to 5 GHz
- Low DC power consumption
Skyworks’ high power PIN diode switch portfolio includes a line of switches with an integrated state switching/boost converter driver circuit. These parts operate with a single 5 V supply and a single TTL control voltage (0 to 3 V) to change switch states. The integrated driver minimizes the number of external components, enabling smaller PCB footprint, simplifying design and implementation.
SKY12207-478LF
RF Switch
RF Switch IC LTE, WiMax SPDT 4 GHz 50 Ohm 16-QFN (4x4)
SKY12208-478LF
RF Switch
RF Switch IC SPDT 2.7 GHz 50 Ohm 16-QFN (4x4)
SKY12210-478LF
RF Switch
RF Switch IC LTE, WiMax SPDT 4 GHz 50 Ohm 16-QFN (4x4)
SKY12212-478LF
RF Switch
RF Switch IC LTE, WiMax SPDT 2.7 GHz 50 Ohm 16-QFN (4x4)
SKY12245-492LF
RF Switch
RF Switch IC LTE SPDT 20-QFN (5x5)
PIN Diodes
Skyworks select PIN diodes are some of the most widely used PIN diodes in the world, for applications which range from RF switching in satellite, television, receiver low noise block (LNB) converters to automotive remote garage door openers and cable television automatic level controls. Skyworks PIN diodes are ideal for transmit/receive switches or low distortion attenuators and support a variety of applications in the automotive, military, medical, infrastructure, and Internet of Things (IoT) markets.
Features:
- Low capacitance for high isolation
- Low resistance
- Low distortion
PIN diodes are three layer diodes, comprised of a heavily doped anode (the "P" layer) and a heavily doped cathode (the "N" layer) separated by a virtually undoped intrinsic layer (the "I" layer). Under forward bias, charge carriers from the P and the N layers are forced into the I layer, which reduces its RF impedance. When a reverse bias voltage is applied across the PIN diodes, all free charge carriers are removed from the I layer, thereby causing its RF impedance to increase. This variable RF impedance versus DC or low frequency bias signal allows the diode to be used in RF switching circuits, in which the PIN diode is either heavily forward-biased or reverse biased, or in RF attenuation circuits, in which case the PIN diode is utilized as a continuously-variable RF resistance by controlling the magnitude of the DC bias current through the diode.
SMP1345-040LF
Diodes - RF
0.9 to 4.0 GHz 50 W High Power
PIN Diode SPDT Switch
SMP1321-040LF
Diodes - RF
0.02 to 2.7 GHz 50 W High Power
PIN Diode SPDT Switch
SMP1322-040LF
Diodes - RF
0.9 to 4.0 GHz, 100 W High Power PIN Diode SPDT Switch
SMP1302-085LF
Diodes - RF
0.05 to 2.70 GHz, 100 W High Power
PIN Diode SPDT Switch
SMP1304-005LF
Diodes - RF
0.3 to 5.0 GHz, 100 W Compact High-Power PIN Diode SPDT Switch with Integrated Driver
SMP1307-005LF
Diodes - RF
Low Distortion / High IP3 Attenuator PIN Diode
SMP1307-027LF
Diodes - RF
Low Distortion / High IP3 Attenuator PIN Diode
SMP1331-085LF
Diodes - RF
Low Distortion / High Power Switch PIN Diode
DSM8100-000
Diodes - RF
Very Low Capacitance (<0.025pF) Beamlead PIN Diode for High Isolation for X-Band Switches
Limiter Diodes
Skyworks' series of silicon limiter diodes provide passive receiver protection over a wide range of frequencies from 100 MHz to more than 30 GHz. These devices utilize Skyworks established silicon technology for high resistivity and tightly controlled thin basewidth PIN limiter diodes. Limiter circuits employing these devices perform with strong limiting action and low loss.
Features:
- High power, mid-range cleanup designs
- Tight control of basewidth
- SKY16601, SKY16602, SKY16603 represent our new integrated limiter modules
The receiver protector function is performed by a specially processed PIN diode, known as a limiter diode. The PIN limiter diode can be described as an incident-powercontrolled, variable resistor. In the case when no large input signal is present, the impedance of the limiter diode is at its maximum, thereby producing minimum insertion loss, typically less than 0.5 dB. The presence of a large input signal temporarily forces the impedance of the diode to a much lower value, producing an impedance mismatch which reflects the majority of the input signal power back towards its source.
SMP1330-040LF
Diodes - RF
Clean-up Limiter for Receiver Protection
SMP1330-085LF
Diodes - RF
Low Loss, High Power Limiter Diode
CLA4603-085LF
Diodes - RF
Medium Power, Low Loss Limiter Diode
CLA4606-085LF
Diodes - RF
Medium Power, Low Loss Limiter Diode
CLA4607-000
Diodes - RF
Course Limiter Diode for Receiver Protection
CLA4601-000
Diodes - RF
Clean-up Limiter for Receiver Protection
SKY16601-555LF
Diodes - RF
Integrated Single-Stage PIN Diode Limiter Module 0.50 to 6.0 GHz
SKY16602-632LF
Diodes - RF
Low-Threshold PIN Diode Limiter Module 0.2 to 4.0 GHz
SKY16603-632LF
Diodes - RF
High-Linearity Dual PIN Diode Limiter Module 0.6 to 6.0 GHz
Schottky Diodes
Skyworks series of select silicon and GaAs Schottky diodes are optimized for use in detector and mixer applications at frequencies from 10 MHz to 40 GHz. This family of products includes medium, low and zero bias detector (ZBD) barrier height Schottky junctions with low junction capacitance and low series resistance. The diodes are available in die, beam lead and low-cost plastic packages.
Features:
- Low capacitance for high frequency operation
- Excellent sensitivity
- Low noise
- Low forward voltage
- High reverse breakdown voltage
- Fast switching capability
A typical diode combines p-type and n-type semiconductors to form a p-n junction. In a Schottky diode, metal replaces the p-type semiconductor. The N type layer is the cathode and the P type (Si only) is anode. This metal can range from platinum to tungsten, molybdenum, gold, etc. When metal is combined with an n-type semiconductor, a metal-semiconductor junction is formed. This junction is referred to as a Schottky Barrier. The behavior of the Schottky Barrier will differ depending on whether the diode is in an unbiased, forward-biased, or reverse-biased state.
Unbiased State
In an unbiased state, free electrons will move from the n-type semiconductor to the metal to establish balance. This flow of electrons created the Schottky Barrier where negative and positive ions meet. Free electrons will need a greater supplied energy than their built-in voltage to overcome this barrier.
Forward-Biased State
In this state, electrons can cross the junction from n-type to metal if the applied voltage is greater than 0.25 volts. This results in a flow of current that is typical for most diodes.
Reverse-Biased State
This state expands the Schottky Barrier and prevents the flow of electric current. However, if the reverse bias voltage continues to increase this can eventually break down the barrier. Doing so will allow current to flow in the reverse direction and may damage the component.
SMS7621-079LF
Diodes - RF
Low Barrier Detector Schottky Diodes
SMS7621-040LF
Diodes - RF
Low Barrier Detector Schottky Diodes
SMS7621-005LF
Diodes - RF
Series Pair Detector Schottky Diodes
SMS3923-081LF
Diodes - RF
General Purpose Schottky Diode
SMS7630-040LF
Diodes - RF
Zero Biased Detector Schottky Diode
SMS3922-079LF
Diodes - RF
Medium Barrier Detector Schottky Diode
SMS7630-079LF
Diodes - RF
Zero Biased Detector Schottky Diode
Varactor Diodes
Skyworks series of select silicon tuning varactor diodes are used as the electrical tuning elements in voltage controlled oscillators (VCOs), voltage variable analog phase shifters, and voltage tuned filters (VTFs). This family of diodes includes abrupt junction tuning varactors, useful for low loss, narrow band circuits, and hyperabrupt junction varactors, useful for wide bandwidth VCOs and VTFs and wide phase range variable phase shifters.
Features:
- Large available change in capacitance for wide bandwidth
- Low resistance for low loss
Tuning varactors are p-n junction diodes. The depletion region that forms at the junction of the diode acts as a nearly-ideal insulator, which separates the highly-doped anode from the cathode layer, thus forming a parallel plate capacitor. The thickness of the depletion layer can be increased by applying a reverse bias voltage to the diode.
SMV1232-079LF
Diodes - Variable Capacitance
Wide Band Width Tuning Varactor Diode
SMV2019-040LF
Diodes - Variable Capacitance
Low Capacitance Tuning Varactor Diode
SMV1247-040LF
Diodes - Variable Capacitance
Low Capacitance & High Q Tuning Varactor Diode
SMV1249-079LF
Diodes - Variable Capacitance
Medium Capacitance & Wide Tuning Range Diode
SMV1255-079LF
Diodes - Variable Capacitance
High Capacitance & Wide Tuning Range Diode
SMV1405-040LF
Diodes - Variable Capacitance
Ultra High Q (3200) Abrupt Junction Varactor Diode for Filter and VCO Applications
SMV1430-040LF
Diodes - Variable Capacitance
Low Capacitance (0.60 pF) Abrupt JunctionTuning Diode
SMV1801-079LF
Diodes - Variable Capacitance
High Ratio Hyperabrupt JunctionTuning Diode
Evaluation Boards
SMP1302-085LF-EVB
Eval Board for SMP1302-085LF
PIN Diode For Use With SMP1302-085LF
SMP1307-027LF-EVB
Eval Board for SMP1307
.JPG)
PIN Diode For Use With SMP1307-027LF
SMP1330-085LF-EVB
Eval Board for SMP1330
PIN Diode For Use With SMP1330-085LF
CLA4603-085LF-EVB
Eval Board for CLA4603
PIN Diode For Use With CLA4603-085LF
CLA4606-085LF-EVB
Eval Board for CLA4606
PIN Diode For Use With CLA4606-085LF
CLA4609-086LF-EVB
Eval Board for CLA4609-086LF
PIN Diode For Use With CLA4609-086LF
Related Content
Limiter Diodes
Skyworks’ broad product portfolio includes limiter diodes as packaged and bondable silicon chips, in addition to ceramic hermetic packaged and plastic surface mount packaged devices for receiver protection applications.
Silicon Schottky Diodes
Skyworks broad product portfolio includes Schottky diodes as packaged and bondable silicon chips, in addition to ceramic hermetic, chip on board, beam-lead, flip chip and plastic surface mount packaged devices for mixer or detector applications.
High Power PIN Diodes
Skyworks’ SMP1324-087LF, SMP1371-087LF and SMP1302-085LF PIN diodes are designed for use in high-power-handling switches from 1–900 MHz. SMP1324-087LF and SMP1371-087LF are optimized for use as series diodes.
PIN, Limiter, Schottky, Varactor Diodes
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