SCT2H12NZ Gate Driver Circuit

ROHM's SCT2H12NZ provides the high breakdown voltage required for auxiliary power supplies in industrial equipment. Conduction loss is reduced by 8x over conventional silicon MOSFETs, contributing to greater energy efficiency.

Optimized for auxiliary power supplies in industrial equipment

Compared to 1500 V silicon MOSFETs used in auxiliary power supplies for industrial equipment, the SCT2H12NZ provides higher breakdown voltage (1700 V) with 8x smaller ON resistance (1.15 Ω). In addition, the compact TO-3PFM package maintains the creepage distance (distance measured along the surface of the insulating material) required by industrial equipment. ROHM is releasing a surface mount type (TO268-2L) that also provides adequate creepage distance.

Improved efficiency when combined with ROHM's dedicated IC

Using this latest SiC MOSFET in combination with ROHM's AC/DC converter control IC (BD7682FJ-LB) designed specifically for SiC MOSFET drive will make it possible to maximize performance and increase efficiency by up to 6%. At the same time, heat generation will be reduced, minimizing thermal countermeasures and enabling the use of smaller components.

3.75k Isolation

By adding BM61M41RFV or BM61S40RFV, users are able to have a gate driver with an isolation voltage of 3750 V_RMS, I/O delay time of 65 ns, and minimum input pulse width of 60 ns. It has the undervoltage lockout (UVLO) function and Miller clamp function.