ROHM Semiconductor

650 V GaN HEMTs

ROHM's HEMTs increase efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters

Image of ROHM’s 650 V GaN HEMTsROHM's GNP1070TC-Z and GNP1150TCA-Z 650 V Gallium Nitride (GaN) HEMTs are optimized for a wide range of power supply system applications. These products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., which develops GaN devices.

Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. The adoption of new materials such as GaN and SiC is key to improving the efficiency of power supplies.

After initiating mass production of 150 V GaN HEMTs featuring a gate breakdown voltage of 8 V in 2022 in March 2023 ROHM established control IC technology for maximizing GaN performance. This time, ROHM developed 650 V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.

650 V GaN HEMTs

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
ECOGAN?, 650V 27A TOLL-8N, E-MODGNP2070TD-ZTRECOGAN?, 650V 27A TOLL-8N, E-MOD0 - Immediate$102.82View Details
ECOGAN, 650V 20A DFN8080K, E-MODGNP1070TC-ZE2ECOGAN, 650V 20A DFN8080K, E-MOD230 - Immediate$86.77View Details
ECOGAN, 650V 11A DFN8080AK, E-MOGNP1150TCA-ZE2ECOGAN, 650V 11A DFN8080AK, E-MO2606 - Immediate$50.13View Details
IC GATE DRVR LOW-SIDE 6UDFNBD2311NVX-LBE2IC GATE DRVR LOW-SIDE 6UDFN3342 - Immediate$35.23View Details
Published: 2023-05-22

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650 V EcoGaN™ HEMT Power Devices and System-in-Package Power Stage Products ROHM's EcoGaN™ HEMT power stage IC features a built-in 650 V gallium-nitride (GaN) high-electron mobility transistor (HEMT) and gate driver.