pSemi

PE423211 UltraCMOS® SPDT Switch

pSemi SPDT switches feature low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high power handling

Image of pSemi PE423211 UltraCMOS® SPDT SwitchThe pSemi PE423211 HaRP™ technology-enhanced SPDT RF switch is designed for use in high-performance ISM, WLAN 802.11 a/b/g/n/ac/ax, Bluetooth®, and ultra-wideband (UWB) applications supporting bandwidths up to 10.6 GHz. This switch features low power consumption, low insertion loss, high port-to-port isolation, fast switching speed, and high power handling, all in a compact 6-lead 1.6 mm × 1.6 mm DFN package. The PE423211 device also has robust ESD and temperature performance. The PE423211 is manufactured on the pSemi UltraCMOS process, a patented silicon-on-insulator (SOI) technology.

Features
  • AEC-Q100 Grade 2 qualified
  • Broadband frequency support: 0.3 GHz to 10.6 GHz
  • Low power consumption of 90 nA
  • Low insertion loss
  • High isolation
  • P1dB = +24 dBm
  • Operating temperature range: -40°C to +105°C
  • ESD performance: 2,000 V HBM; 500 V CDM
  • Packaging: 6-lead 1.6 mm × 1.6 mm DFN
Applications
  • ISM bands
  • WLAN 802.11 a/b/g/n/ac/ax
  • Bluetooth
  • UWB
  • Remote keyless entries
  • Telematics
  • Infotainment
  • In-cabin monitoring system (ICMS)
  • General-purpose switching

PE423211 UltraCMOS® SPDT Switch

ImageManufacturer Part NumberDescriptionAvailable QuantityPriceView Details
AEC-Q100 CERTIFIED SPDT, LOW IL,PE423211A-ZAEC-Q100 CERTIFIED SPDT, LOW IL,0 - Immediate$3.95View Details
EVAL BOARD FOR PE423211EK423211-01EVAL BOARD FOR PE4232110 - Immediate$782.04View Details
Published: 2025-08-14