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NTH4L040N120M3S / NTHL022N120M3S SiC MOSFETS
onsemi's NTH4L040N120M3S and NTHL022N120M3S SiC MOSFETS are suited for fast switching applications
onsemi's silicon carbide (SiC) MOSFET family, 1200 V M3S planar EliteSiC and SiC MOSFETs are optimized for fast switching applications. Planar technology works reliably with negative gate voltage drive and turn off spikes on the gate. This EliteSiC and SiC family delivers optimum performance when driven with an 18 V gate drive but also works well with a 15 V gate drive.
Features
- NTH4L040N120M3S
- Typ. RDS(on) = 40 m @ VGS = 18 V
- Ultra-low gate charge (QG(tot) = 75 nC)
- High-speed switching with low capacitance (Coss = 80 pF)
- 100% avalanche tested
- Halide-free and RoHS compliant with exemption 7(a), Pb−free second level interconnection (2LI)
- NTHL022N120M3S
- Typ. RDS(on) = 22 m @ VGS = 18 V
- Ultra-low gate charge (QG(tot) = 137 nC)
- Low effective output capacitance (Coss = 146 pF)
- 100% avalanche tested
- Halide-free and RoHS compliant with exemption 7(a), Pb−free 2LI
Applications
- Solar inverters
- Electric vehicle charging stations
- Uninterruptible power supplies (UPS)
- Energy storage systems
- Switch mode power supplies (SMPS)
NTH4L040N120M3S/NTHL022N120M3S SiC MOSFETs
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | NTH4L040N120M3S | SILICON CARBIDE (SIC) MOSFET ELI | 211 - Immediate | $124.55 | View Details |
|  | NTHL022N120M3S | SILICON CARBIDE (SIC) MOSFET ELI | 115 - Immediate | $158.55 | View Details |
Published: 2023-10-13
Hong Kong, China