onsemi EliteSiC

Developed an internal supply chain to assure customer supply of SiC devices to support the rapid growth of the sustainable ecosystem.

onsemi EliteSiC addresses the needs of demanding applications like solar inverters, electric vehicle chargers, and uninterruptible power supplies. The devices are a comprehensive portfolio of energy efficient Silicon Carbide (SiC) Diodes, MOSFETs, Modules, and Gate Drivers.

Features

  • Proven quality/robust planar design
    • In-process control and burn-in
    • Defect scanning during manufacturing
    • 100% Avalance testing of all dies
    • No drift in threshold or parameters
    • High-reliability gate oxide
    • Automotive Qualification AEC-Q100
  • Best-in-class design tools
    • Physicall and scalable accurate simulation models
    • Application notes and design guides
  • Fully integrated manufacturing
    • Form powder to products
  • Automotive or industrial grade for all values and packages
  • 3rd generation SiC offering
    • Optimized for high-temperature dependency
      • Diodes, low series-resistance temperature dependency
      • MOSFETs, stable reverse recovery over temperature
    • Improved parasitic capacitances for high-frequency high efficiency application
    • Large die with low RDS(on) available
  • Wide offering in standard and custom Power Integrated Modules (PIM)
  • Large portfolio of voltages and RDS(on) available in 3- and 4- leads packages

Additional Resources

SiC Webinar with Hunter Freberg

Future-Proofing Your Silicon Carbide Design

Diodes

These products use a completely new technology that provides superior switching performance and higher reliability to silicon.

MOSFETs

These products are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost.

IGBTs

Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.

Diodes

These products use a completely new technology that provides superior switching performance and higher reliability to silicon.

D1

Features:

  • 650 V, 1200 V and 1700 V voltages
  • D2PAK2, D2PAK3, TO-220-2, TO-247-2, TO-247-3 packages
  • Large die size with a low thermal resistance (Rth)
  • Optimized for high non-repetitive forward surge current (IFSM)
  • Vienna rectifier input stages applications

D2

Features:

  • 650 V voltages
  • DPAK-3, D2PAK-2, D2PAK-3, PQFN-4, TO-220-2, TO-220-3, TO-247-2, TO-247-3 packages
  • Low capacitive charge (QC)
  • Optimized for high-speed switching with a low forward voltage
  • PFC and output rectification applications

D3

Features:

  • 1200 V voltages
  • TO-247-2LD, TO-247-3LD packages
  • Low capacitive charge (QC) and forward voltage (VF)
  • Optimized for high-temperature operation with low series-resistance temperature dependency
  • Higher power PFC and output rectification applications

MOSFETs

These products are designed to be fast and rugged and include system benefits from high efficiency to reduced system size and cost.

M1

Features:

  • 1200 V and 1700 V voltages
  • D2PAK7, TO-247-3LD, TO-247-4LD, bare die packages
  • +22V/-10V maximum gate-to-source voltage
  • Low RDS(on) and high short circuit withstand time (SCWT)
  • Balanced between switching losses and conduction losses
  • Can be used to replace 1200 V IGBTs

M2

Features:

  • 650 V, 750 V, and 1200 V voltages
  • D2PAK7, H-PSOF8L, TDFN4 8x8, TO-247-3LD, TO-247-4LD packages
  • +22V/-8V maximum gate-to-source voltage
  • Low RDS(on) and high short circuit withstand time (SCWT)
  • Optimized for the lowest RDS(on) for low switching speed applications
  • Can be used to replace SuperFET™

M3S

Features:

  • Optimized for high switching frequency applications with hard-switched topologies
  • ~40% lower total switching losses (Etot) over comparable 1200 V 20 mΩ M1
  • Solar, onboard chargers, and EV charging stations applications
  • No short circuit capability

M3P

Features:

  • 1200 V voltages
  • D2PAK7, TO-247-3LD, TO-247-4LD packages
  • +22V/-10V maximum gate-to-source voltage
  • Improved parasitic capacitances (Coss, Ciss, Crss)
  • Optimized for high-temperature operation with stable reverse recovery over temperature (1200 V 22 mΩ M3S ~46% lower Qrr vs 1200 V 20 mΩ)
  • Can be used to replace 1200 V IGBTs

IGBTs

Insulated Gate Bipolar Transistors (IGBTs) that offer maximum reliability in high performance power conversion applications.

FS4

Features:

  • TJ = 175°C maximum junction temperature
  • Positive temperature coefficient for easy parallel operating
  • High current capability
  • VCE(Sat) = 1.6 V (Typ.) @ IC = up to 75 A low saturation voltage
  • 100% of the parts are tested for ILM
  • Fast switching
  • Tight parameter distribution
  • No reverse recovery/no forward recovery
  • AEC−Q101 qualified and PPAP capable