30 V to 60 V Trench6 N-Channel MOSFET

onsemi's 30 V to 60 V Trench6 N-Channel MOSFET advanced PowerTrench® process incorporates shielded gate technology

Image of  onsemi's 30 V to 60 V Trench6 N-Channel MOSFET The N-Channel T6 60 V MV MOSFET is produced using onsemi's advanced PowerTrench process that incorporates shielded gate technology. This process has been optimized to minimize on-state resistance while maintaining superior switching performance with an excellent soft body diode.

Features and Benefits
  • Compact packaging (5 mm x 6 mm)
  • Ultra-low RDS(ON)
  • One of the best RDS(ON) on 40 V and 60 V in the marketplace
  • Increased power density
  • These devices are Pb and halogen/BFR free
  • Excellent thermal conduction
  • Improve system efficiency
  • RoHS compliant
Applications
  • O-ring
  • Motor drive
  • DC/DC converters
  • Power load switch
  • Battery management
Published: 2021-08-04