These Nexperia high-performance N-channel MOSFETs are designed for efficient power management in various applications. These MOSFETs utilize TrenchMOS technology to deliver superior performance and reliability. They are available in compact LFPAK56 and LFPAK88 packages, making them ideal for space-constrained designs. With features such as high peak drain current, low RDS(ON), and high operating junction temperature, these MOSFETs are suitable for a wide range of applications, including synchronous rectification, DC/DC converters, motor control, and power management systems. The PSMN series offers both logic-level and standard-level gate drive options, providing flexibility for different design requirements. These MOSFETs are also qualified to +175°C, ensuring robust performance in demanding environments.
Features
- N-channel ASFET
- 100 V maximum drain-source voltage
- Low RDS(ON) of 53 mΩ (PSMN047-100NSE)
- Low RDS(ON) of 82 mΩ (PSMN071-100NSE)
- Enhanced SOA
- Compact DFN2020 package
- 60% smaller than the LFPAK33 package
- Low I2R conduction losses
- Very low IDSS leakage
- High-power PoE capability (60 W and higher)
- Fault-tolerant load switch
- Efficient inrush management
- Suitable for eFuse applications
- Reliable relay replacement
- Robust thermal management
Applications
- PoE systems
- IEEE802.3at and proprietary PoE solutions
- Inrush management
- eFuse applications
- Battery management systems
- Relay replacement
- Wi-Fi® hotspots
- 5G picocells
- CCTV systems
- High-power load switches
- Industrial automation
- Telecommunications equipment
- Datacenters
- Network infrastructure
- Consumer electronics
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These Nexperia high-performance N-channel MOSFETs are designed for efficient power management in various applications. These MOSFETs utilize TrenchMOS technology to deliver superior performance and reliability. They are available in compact LFPAK56 and LFPAK88 packages, making them ideal for space-constrained designs. With features such as high peak drain current, low RDS(ON), and high operating junction temperature, these MOSFETs are suitable for a wide range of applications, including synchronous rectification, DC/DC converters, motor control, and power management systems. The PSMN series offers both logic-level and standard-level gate drive options, providing flexibility for different design requirements. These MOSFETs are also qualified to +175°C, ensuring robust performance in demanding environments.
Hong Kong, China