NGD4300 Dual-MOSFET Gate Drivers

The NGD4300 from Nexperia includes a range of high-performance dual-MOSFET gate drivers designed to drive both high-side and low-side N-channel MOSFETs in synchronous buck or half-bridge configurations. These devices are engineered to provide robust and efficient gate driving capabilities with a peak source current of 4 A and a peak sink current of 5 A. The floating high-side driver can work with rail voltages up to 120 V and uses a bootstrap supply with an integrated diode. Both low-side and high-side output drivers have independent undervoltage lockout (UVLO) circuits, which disable the output driver when the driver supply is below its threshold level.

The NGD4300 accepts input control signals complying with both TTL and CMOS signaling as low as 2.5 V (±10%), ensuring compatibility with various control systems. The low voltage, provided by an internal voltage regulator, is used to supply circuitry in signal paths controlling the low-side and high-side power switches, enabling low-power operation and better-controlled driver performance irrespective of the IC supply voltage. Excellent delay matching of 1 ns typical is achieved for the low-side and high-side signal paths. The NGD4300 is offered in SO8, HWSON8, and HSO8 packages and operates over an extended temperature range from -40°C to +125°C.