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Split-Gate Technology MOSFETs
MCC’s split-gate technology MOSFETs are suitable for space-saving and high-efficiency requirements in applications
Micro Commercial Components' split-gate technology MOSFETs offer extremely low RDS(on) value and allow higher current density in smaller packages. This makes them suitable for space-saving and high-efficiency requirements in applications.
Split-Gate Advantages
- Increases BVDSS
- Higher N-doping in the drift region minimizes RDS(on)
- Decreases QGD that reduces Miller charge coupling
- Improved FOM reduces switching and conduction losses
- Current SGT portfolio offering ranges from 30 V to 150 V rating and 1.5 mΩ lowest RDS(on) value in common packages
Features and Benefits
- Wide range of LV MOSFET portfolio
- Low RSP value (specific on-state resistance)
- High efficiency
- High quality
- Fast delivery
Split-Gate Technology MOSFET's
| Image | Manufacturer Part Number | Description | Available Quantity | Price | View Details | |
|---|---|---|---|---|---|---|
 |  | MCAC80N10Y-TP | MOSFET N-CH 100 80A DFN5060 | 20485 - Immediate | $22.33 | View Details |
| | MCAC30N06Y-TP | MOSFET N-CH 60 30A DFN5060 | 4 - Immediate | $9.61 | View Details |
| | MCAC50N10Y-TP | MOSFET N-CH 100 50A DFN5060 | 5297 - Immediate | $20.20 | View Details |
|  | MCU60P06-TP | MOSFET P-CH 60V 60A DPAK | 14768 - Immediate | $26.28 | View Details |
Published: 2020-05-22
Hong Kong, China