High-Performance Silicon Carbide (SiC) Schottky Diodes

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            High-Performance Silicon Carbide (SiC) Schottky Diodes
                    MCC’s SiC diodes are well-suited for inverters for solar and motion control, UPS, Telekom base stations, PFC, and lighting
    

Image of MCC's High-Performance Silicon Carbide (SiC) Schottky Diodes Micro Commercial Components’ high-performance SiC Schottky diodes provide a high-efficiency, high-temperature performance of up to +175°C. These diodes, together with the 650 V super-junction MOSFETs, create a complete cost-efficient discrete solution. These SiC diodes are available in 650 V (2 A/4 A) and 1200 V (2 A/5 A/10 A/20 A) versions. Available packages (TO-220, TO-247, and DPAK), other current levels, and housings are under qualification. Typical applications for these SiC diodes are inverters for solar and motion control, UPS, Telekom base stations, power factor correction (PFC), and lighting applications.

Features

Extreme low switching loss
Higher switching frequency
Positive temperature coefficient for parallel application

Higher efficiency to standard Schottky diodes
Higher working temperature up to +175°C
Higher voltage up to 1200 V

Applications

Inverters for solar and motion controls
UPS

Telekom base stations
PFC and lighting applications

High-Performance Silicon Carbide (SiC) Schottky Diodes

Manufacturer Part Number	Description	Available Quantity	Price	View Details
SIC05120B-BP	DIODE SIL CARB 1200V 5A TO220AC	895 - Immediate	See Page for Pricing	View Details
SIC10120PTA-BP	DIODE SIL CARB 1200V 10A TO247AD	0 - Immediate	$72.87	View Details
SIC20120PTA-BP	DIODE SIL CARB 1200V 10A TO2473	0 - Immediate	$144.00	View Details
SICU02120B-TP	DIODE SIL CARBIDE 1200V 2A DPAK	0 - Immediate	$33.91	View Details
SICU0260B-TP	DIODE SIL CARBIDE 650V 2A DPAK	2357 - Immediate	$19.21	View Details
SICU0460B-TP	DIODE SIL CARBIDE 650V 4A DPAK	2403 - Immediate	$31.12	View Details