IXSJxxN120R1 SiC MOSFETs

The IXSJxxN120R1 series of silicon carbide (SiC) MOSFETs from IXYS/Littelfuse deliver exceptional performance for high-voltage, high-efficiency power conversion systems. With a blocking voltage of up to 1200 V and a low typical on-resistance of just 18 mΩ, these devices are optimized for applications requiring fast switching, low conduction losses, and superior thermal performance. The devices feature a low gate charge and input capacitance, enabling reduced gate drive power and minimized switching losses. They are ideal for use in electric vehicle (EV) charging infrastructure, solar inverters, and high-frequency power supplies.

Packaged in an isolated TO-247-3L format, the IXSJxxN120R1 MOSFETs offer enhanced thermal management and electrical isolation, supporting robust operation in harsh environments. Their wide gate voltage range and low EMI characteristics make them a versatile choice for designers seeking to improve system efficiency and reliability. Whether used in motor drives, battery chargers, or uninterruptible power supplies, these SiC MOSFETs provide the performance and durability needed for next-generation power electronics.