600 V Ultra Junction X3 HiPerFET™ Discrete MOSFETs

Product Highlights > 600 V Ultra Junction X3 HiPerFET™ Discrete MOSFETs

            600 V Ultra Junction X3 HiPerFET™ Discrete MOSFETs
                    IXYS' X3-Class N-Channel MOSFETs provide low on-resistance [RDS(ON)] and gate charge (Qg)
    

Image of IXYS' 600 V Ultra-Junction X3 HiPerFET™ Discrete MOSFETs IXYS, a Littelfuse Technology, offers N-Channel ultra junction MOSFETs that provide an excellent figure of merit (R_DS(ON) times Q_g), which translates into lowest conduction and switching losses, allowing for higher power densities and energy efficiencies in power systems. The latest ultra junction X3-class power MOSFETs feature significantly reduced channel resistance R_DS(ON) and gate charge Q_g. This family exhibits significant reduction in the Figure of Merit (FOM) – R_DS(ON) x Q_g as compared to its predecessor X2-Class. These benefits enable designers to achieve higher efficiency and increased power density. This HiPerFET™ series of power MOSFETs feature body diodes which offer low reverse recovery charge (Q_RM) and short reverse recovery time (t_rr). Ultra junction, X3-class 600 V MOSFETS can be used for applications that include synchronous rectification for telecom power supplies, motor control, uninterruptible power supplies, DC-DC converters, solar inverters, and multilevel inverters.