SiC MOSFET and IGBT Driver IX4351NE - IXYS

Product Highlights > SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NE

            SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NE
                    IXYS, a Littelfuse technology's IX4351NE has protection features including UVLO and thermal shutdown detection
    

Image of IXYS' SiC MOSFET and IGBT Driver 9 A Peak Output – IX4351NE IXYS, a Littelfuse Technology, has designed a driver to work specifically with SiC MOSFETs and high power IGBTs. Separate 9 A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a selectable negative gate drive bias for improved dv/dt immunity and faster turn-off.

IXYS Integrated Circuits Division also has an evaluation board for the IX4351 which contains all the necessary circuitry to demonstrate the features of a high power SiC MOSFET gate driver and SiC MOSFET. The board includes an LSIC1MO120E0080 1200 V SiC MOSFET from Littelfuse with an R_DS(ON) of 80 m typical and an ID of 25 A.

MOSFET Features

Separate 9 A peak source and sink outputs
Operating voltage range: -10 V to +25 V
Internal negative charge pump regulator for selectable negative gate drive bias
Desaturation detection with soft shutdown sink driver
TTL and CMOS compatible input
Undervoltage lockout (UVLO)
Thermal shutdown
Open drain FAULT output

Evaluation Board Features

9 A source and sink outputs on gate driver
Output capable of switching 25 A
Gate drive supply range from 13 V to 25 V
3.3 V / 5 V CMOS/TTL logic compatibility enables seamless interfacing with microcontrollers
Independent undervoltage lockout (UVLO)
Input pin includes Schmitt trigger for better noise immunity
Desaturation detection with soft shutdown
Negative charge pump