IX4352NE 9 A Low Side SiC MOSFET and IGBT Driver

The IX4352NE gate driver from IXYS, a Littelfuse Technology , is designed specifically to drive SiC MOSFETs and high-power IGBTs. Separate 9 A source and sink outputs allow for tailored turn-on and turn-off timing while minimizing switching losses. An internal negative charge regulator provides a user-selectable negative gate drive bias for improved dV/dt immunity and faster turn-off.

Desaturation detection circuitry senses an overcurrent condition of the SiC MOSFET and initiates a soft turn-off, thus preventing a potentially damaging dV/dt event. The non-inverting logic input, IN, is TTL and CMOS compatible; internal level shifters provide the necessary bias to accommodate negative gate drive bias voltages. Additional protection features include undervoltage lockout (UVLO) detection and thermal shutdown. An open drain FAULT output signals a fault condition to the microcontroller.