Infineon Technologies

2ED2182S06F 650 V Half-Bridge MOSFET and IGBT Gate Driver

Infineon's 650 V, 2.5 A high-current half-bridge gate driver IC offers an integrated bootstrap diode in a DSO-8 package

Image of Infineon Technologies' 2ED2182S06F 650 V Half-Bridge MOSFET and Gate Driver Infineon's 650 V half-bridge high-speed power MOSFET and IGBT gate driver has typical 2.5 A sink-and-source current in a DSO-8 package. The MOSFET is based on Infineon's SOI-technology and has excellent ruggedness and noise immunity against negative transient voltages on the VS pin. No parasitic thyristor structures are present in the device, which means no parasitic latch-up at any temperature or voltage condition. The DSO-14 package version is also available in part number 2ED21824S06J.

Features
  • Operating voltages (VS node) up to 650 V
  • Negative VS transient immunity of 100 V
  • Integrated ultra-fast, low resistance bootstrap diode lowers the BOM cost
  • Floating channel designed for bootstrap operation
  • Integrated shoot-through protection with built-in dead time (400 ns)
  • Maximum supply voltage of 25 V
  • HIN and LIN input logic
  • Independent undervoltage lockout (UVLO) for both channels
  • 200 ns propagation delay
  • Logic operational up to -11 V on VS pin
  • Negative voltage tolerance on inputs of -5 V
  • The floating channel can be used to drive an N-channel MOSFET, SiC MOSFET, or IGBT in the high side configuration
Applications
  • Fast EV charging
  • Home appliances
  • Motor control and drives
  • Power management (SMPS) - reference design
  • Power tools

2ED2182S06F 650 V Half-Bridge MOSFET and IGBT Gate Driver

ImageManufacturer Part NumberDescriptionNumber of DriversGate TypeVoltage - SupplyAvailable QuantityPriceView Details
IC GATE DRVR HALF-BRIDGE 8SOIC2ED2182S06FXUMA1IC GATE DRVR HALF-BRIDGE 8SOIC1IGBT, MOSFET (N-Channel)10V ~ 20V169 - Immediate$14.93View Details
Published: 2020-10-19