1,200 V IGBT7 TRENCHSTOP™ MOSFETs

Infineon Technologies’ 7^th generation of 1,200 V TRENCHSTOP^™ IGBTs sets a benchmark in the world of discrete IGBT and diode technology. This unique discrete offering provides a high current rating portfolio up to 140 A in four different package types, with conduction parameter VCE(sat) 50% lower compared to previous generations and switching losses up to 84% lower. They inherently provide easy EMI design and higher reliability in applications with harsh conditions (including HV-H3TRB and cosmic ray robustness). For the first time ever, this technology is now available for the 1,200 V discrete IGBT market. Check out the full lineup that includes the H7, S7, and T7 series with optimized performance for specific applications.

S7 series: The 1,200 V TRENCHSTOP IGBT7 S7 portfolio represents the superior option for all industrial applications requiring short-circuit capability/ruggedness. The benchmark efficiency and short-circuit rugged discretes provide at least 10% lower saturation voltage than previous generations. Select devices are co-packed with very soft full-rated EC7 (emitter-controlled) diodes, offering a significantly reduced IGBT saturation VCE(sat) and low Q_rr. This series provides superior controllability and short-circuit ruggedness extending benchmarks in traditional IGBT devices.

H7 series: The 1,200 V IGBT co-pack discrete device uses TRENCHSTOP IGBT7 H7 combined with emitter-controlled EC7 rapid diode technologies to provide specific, best-in-class conduction and switching power loss performance coupled with robustness for harsh conditions, and a unique high-current rating portfolio, covering 40 A to 140 A in a TO-247 package. The resulting performance helps to fulfill the increasing requirements of modern fast-switching industrial inverter systems.

Existing T7 series: This 650 V series was the first designed with the latest micro-pattern trench technology that offers unparalleled control and performance, along with a freewheeling diode resulting in significant loss reduction, improved efficiency, and increased power density. It was designed to enable switching frequency flexibility going from below 5 kHz up to 40 kHz in a single solution. It is a one-to-one alternative to predecessor generations with improved performance and optimized for industrial motor drives and controls.