1200 V Silicon Carbide Schottky Diode

Infineon's CoolSiC™ Generation 5, 1200 V, 10 A Schottky diodes are available in a D²PAK real 2-pin package. By connecting SiC diodes in parallel and in a small device package, a highly efficient system can be achieved while minimizing board space requirements. The elimination of the middle pin reduces the risk of partial discharge at high-voltage and high-frequency operation.

Features

• Zero O_RR leading to no reverse recovery losses
• High surge current capability
• Real 2-pin package with 4.7 mm creepage and 4.4 mm clearance distances
• Tight forward voltage distribution
• Temperature-independent switching behavior
• Low forward voltage
• Enables higher-frequency/increased power density in compact designs
• System size/cost savings due to reduced heatsink requirements and smaller magnetics
• Reduced risk of partial discharge on the surface (real 2-pin)
• System efficiency improvement over Si diodes
• System reliability improvement
• Reduced EMI
• RoHS II standard compliant (Lead-free die attach)

Resources

• Design Rules SiC Schottky Diode CoolSiC™
• Introduction to CoolSiC™ Schottky Diodes 1200 V G5
• CoolSiC™ Schottky Diodes 600 V 650 V 1200 V G5 Reliability Considerations
• CoolSiC™ Schottky Diodes 600 V 650 V 1200 V G5 SMPS Circuit Designs
• CoolSiC™ Technology